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Materialy Elektronnoi Tekhniki

MATERIALS SCIENCE AND TECHNOLOGY. SEMICONDUCTORS
ArticleName
ZnTe Homogeneity Limits
ArticleAuthors
I. Kh. Avetissov, E. N. Mozhevitina, A. V. Khomykov, R. I. Avetissov, A. Yu. Zinovjev
ArticleAuthorsData

D. Mendeleyev University of Chemical Technology of Russia

I. Kh. Avetissov, E. N. Mozhevitina, A. V. Khomykov, R. I. Avetissov, A. Yu. Zinovjev

MATERIALS SCIENCE AND TECHNOLOGY. DIELECTRICS
ArticleName
The Certified Reference Materials of Organization for Optical Parameters Measurement of Single Crystals and Stocks on Their Base
ArticleAuthors
M. B. Bykova, Zh. A. Goreeva, I. S. Didenko, N. S. Kozlova, V. V. Sidorin
ArticleAuthorsData

National University of Science and Technology MISiS

M. B. Bykova, Zh. A. Goreeva, I. S. Didenko, N. S. Kozlova

 

Moscow state technical university of radio engineering, electronics and automation

V. V. Sidorin

MATERIALS SCIENCE AND TECHNOLOGY. MAGNETIC MATERIALS
ArticleName
Research Opportunities Ferrite 2000NM the Short Process Flow
ArticleAuthors
V. G. Kostishin, I. I. Kaneva, V. G. Andreev, A. N. Nikolaev, E. I. Volkova
ArticleAuthorsData

University of Science and Technology MISiS

V. G. Kostishin, I. I. Kaneva, V. G. Andreev, A. N. Nikolaev, E. I. Volkova

PHYSICAL CHARACTERISTICS AND THEIR STUDY
ArticleName
X−ray Topographic Study of Defects in Si−based Multilayer Epitaxial Power Devices
ArticleAuthors
I. L. Shulpina, V. A. Kozlov
ArticleAuthorsData

Ioffe Physico–Technical Institute of Russian Academy of Sciences

I. L. Shulpina

 

FID Technology Ltd., Power Semiconductors Ltd

V. A. Kozlov

ArticleName
Application of in situ X–ray Reflectivity for Determining parameters of Nanoscale Silicon Films
ArticleAuthors
I. S. Smirnov, E. G. Novoselova, A. A. Egorov, I. S. Monakhov
ArticleAuthorsData

Moscow institute of electronics and mathematic, Higher School of Economics

I. S. Smirnov, E. G. Novoselova, A. A. Egorov

 

Research Institute of Advanced Materials and Technologies

I. S. Monakhov

EPITAXIAL LAYERS AND MULTILAYERED COMPOSITIONS
ArticleName
Electro−physical and Photoelectrical Characteristics of MIS−structures Based on Hetero−epitaxial HgCdTe MBE with Non−uniform Distribution of Composition
ArticleAuthors
A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh
ArticleAuthorsData

Detached structural subdivision «Siberian Physical–Technical Institute of Tomsk State University

A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh

ArticleName
Influence of Conditions of Growth on Structural Perfection of Layers of AlN Received by Method MOS−gidridnoy of an Epitaxy
ArticleAuthors
A. V. Mazalov, D. R. Sabitov, V. A. Kureshov, A. A. Padalitsa, A. A. Marmalyuk, R. Kh. Akchurin
ArticleAuthorsData

Sigm Plus Co.

A. V. Mazalov, D. R. Sabitov, V. A. Kureshov, A. A. Padalitsa

 

Sigm Plus Co.,

Moscow State University of Fine Chemical Technologies
A. A. Marmalyuk

 

Moscow State University of Fine Chemical Technologies

R. Kh. Akchurin

ArticleName
Prediction the Influence of Technological Parameters of Formation of Gas−sensing Materials Based on Polyacrylonitrile on Resistance
ArticleAuthors
S. P. Konovalenko, T. A. Bednaya, T. V. Semenistaya, A. N. Korolev
ArticleAuthorsData

Taganrog State Pedagogical Institute

S. P. Konovalenko, T. A. Bednaya

 

Technological institute of Southern Federal university in g. Taganrog

T. V. Semenistaya, A. N. Korolev

NANOMATERIALS AND NANOTECHNOLOGY
ArticleName
Influence of Silicon Layer Properties on Capacitance Parameters of MIS/SOS−structures
ArticleAuthors
K. L. Enisherlova, V. G. Goriachev, E. M. Temper, S. A. Kapilin
ArticleAuthorsData

FSUE «S&PE «Pulsar»

K. L. Enisherlova, V. G. Goriachev, E. M. Temper, S. A. Kapilin

ArticleName
Formation of Nanocomposites Ni/C Based of Polyacrylonitrile Under IR−radiation
ArticleAuthors
D. G. Muratov, E. V. Yakushko, L. V. Kozhitov, A. V. Popkova, M. A. Pushkarev
ArticleAuthorsData

A. V. Topchiev Institute of Petrochemical Synthesis, RAS

D. G. Muratov, L. V. Kozhitov

 

University of Science and Technology MISiS

E. V. Yakushko, A. V. Popkova, M. A. Pushkarev

ArticleName
Finely Divided Methylsilsesquioxane Particles with SiO4/2 — Fragments in Structure
ArticleAuthors
P. A. Averichkin, Y. B. Andrusov, I. A. Denisov, T. B. Klytchbaev, Y. N. Parkhomenko, N. A. Smirnova,
ArticleAuthorsData

Federal State Research and Design Institute of Rare Metal Industry

P. A. Averichkin, Y. B. Andrusov, I. A. Denisov, Y. N. Parkhomenko, N. A. Smirnova

 

Chemical and Metallurgical Holding «Metal»

T. B. Klytchbaev