Institute of Microelectronics Technology and High−Purity Materials Russian Academy of Sciences:

D. V. Roshchupkin

E. V. Emelin

FOMOS Materials Co.:

O. A. Buzanov

The process of repolarization of a LiTaO₃ crystal by e−beam lithography was studied. The process of fabrication of ferroelectric domains with domain width of 1 μm was demonstrated. It was shown that in the 127° Y′−cut of a ferroelectric LiTaO₃ crystal the ferroelectric domains is formed at the angle of 37° the crystal surface and growth along polar axis Z from negative surface to positive surface Z.

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