National Research Nuclear University «MEPhI»:
A. S. Gusev
A. V. Zenkevich
N. I. Kargin
D. V. Averyanov
M. M. Grekhov
Karpov Institute of Physical Chemistry:
S. M. Ryndya
Silicon carbide thin epilayers were grown on Si substrates by pulsed laser ablation of ceramic target. The influence of wafer temperature on morphological and structural properties of SiC layers was investigated by scanning electron microscopy, transmission electron microscopy and X−ray diffractometry.
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