Moscow Institute of Electronics and Mathematic, Higher School of Economics:

I. S. Smirnov

I. G. Dyachkova

E. G. Novoselova

We have studied the transformation of radiation defects generated by proton implantation in n−type silicon crystals with a resistivity of 100 Ohm · cm. The measurements were conducted using high−definition X−ray diffraction (HDD). We show that sequential implantation of protons with energies of 100 + 200 + 300 keV and a fluence of 2 · 10¹⁶ sm⁻² results in the formation of a damaged layer with an increased lattice parameter and a thickness of 2.4 mm. This layer is formed by radiation−induced defects both of vacancy and interstitial types. Vacuum annealing of the irradiated crystals at 600 °C enlarges the radiation−induced defects while reducing their number. After annealing at 1100 °C interstitial type defects prevail.

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