MATERIALS SCIENCE AND TECHNOLOGY.
SEMICONDUCTORS
ArticleName
Pyroelectric response and short-circuit nonstationary
photoelectric current in Sn2P2S6 ferroelectric
semiconductor films
ArticleAuthors
A.A. Bogomolov, A.V. Solnyshkin, D.A. Kiselev,
I.P. Raevsky, D.N. Sandjiev, V.Yu. Shonov
ArticleAuthorsData
A.A. Bogomolov, e-mail: p000717@tversu.ru, A.V. Solnyshkin, D.A. Kiselev, (Tver
State University);
I.P. Raevsky, D.N. Sandjiev, V.Yu. Shonov, (Physics Research Institute, South Federal
University).
Abstract
In this work, experimental results for the effect of external
electric field on the pyroelectric and the photovoltaic responses
of Sn2P2S6 ferroelectric semiconductor films are
presented. The responses were observed under excitation
of the films by periodic rectangular laser beam pulses λ = 632,8 nm). The use of monochromatic laser irradiation
allows one to separate the contributions of pyroelectric and
photovoltaic effects to the summary response. It is shown
that photovoltaic current direction changes after preliminary
polarization of the films.
keywords
Pyroelectric and photovoltaic responses, short
circuit, films, segnetoelectric semiconductor of tin thiohypodiphosphate.
References
1. Burcev, E. V. Fotoprovodimost' segnetojelektrikov-poluprovodnikov SbSJ i Sn2P2S6 v dlinnovolnovoj oblasti spektra
/ E. V. Burcev, V. G. Lazarev, N. P. Procenko, A. I. Rodin // Sb.:
Segnetojelektriki-poluprovodniki. - Rostov-na-Donu : RGU,
1985. - P. 83—87.
2. Arnautova, E. Sn2P2S6 films for memory devices with nondestructive readout/ E. Arnautova, E. Sviridov, E. Rogach, E. Savchenko, A. Grekov // Integrated Ferroelectrics. - 1992. - V. 1. - P. 147—150
3. Bogomolov, A. A. Temperaturnaja zavisimost' piro- i fotojelektricheskogo otklika v plenkah Sn2P2S6 / A. A. Bogomolov, O. V. Malyshkina, A. V. Solnyshkin, I. P. Raevskij, N. P. Procenko, D. N. Sandzhiev // Izv. RAN. Ser. fiz. - 1997. - Vol. 61, N 2. - P. 375—377.
4. Bogomolov, A. A. Osobennosti nestacionarnogo fototoka korotkogo zamykanija v plenkah segnetojelektrika-poluprovodnika Sn2P2S6 / A. A. Bogomolov, A. V. Solnyshkin, D. A. Kiselev, I. P. Raevskij, N. P. Procenko, D. N. Sandzhiev // FTT. - 2006. - Vol. 48, N 6. - P. 1121—1122.
5. Fridkin, V. M. / V. M. Fridkin — Fotosegnetojelektriki. - M. : Nauka, 1979. - 264 s.
6. Bogomolov, A. A. Temperaturnoe povedenie fotovol'taicheskogo i pirojelektricheskogo otklika plenok segnetojelektrikapoluprovodnika Sn2P2S6 / A. A. Bogomolov, A. V. Solnyshkin, D. A. Kiselev, I. P. Raevskij, N. P. Procenko, D. N. Sandzhiev // Poverhnost'. Rentgenovskie, sinhrotronnye i nejtronnye issledovanija. - 2008. - N 6. - P. 98—104.
7. Bogomolov, A. A. Pyroresponse of Sn2P2S6 films on aluminum substrate / A. A. Bogomolov, O. V. Malyshkina, A. V. Solnyshkin, I. P. Raevsky, N. P. Protzenko, D. N. Sandjiev // J. Korean Phys. Soc. - 1998. - V. 32. - P. S251—S252.
8. Bogomolov, A. A. Nonstationary photocurrent and pyroelectric response in aged Sn2P2S6 films / A. A. Bogomolov, A. V. Solnyshkin, D. A. Kiselev, I. P. Raevsky, N. P. Protzenko, D. N. Sandjiev // J. Europ. Ceramic Soc. - 2007. - V. 27. - P. 3835—3838.
9. Garn, L. E. Use of low-frejauency sinusoidal temperature waves to separate pyroelectric currents from nonpyroelectric currents. Part I. Theory / L. E. Garn, E. J. Sharp // J. Appl. Phys. - 1982. - V. 53, Iss. 12. - P. 8974—8979.
2. Arnautova, E. Sn2P2S6 films for memory devices with nondestructive readout/ E. Arnautova, E. Sviridov, E. Rogach, E. Savchenko, A. Grekov // Integrated Ferroelectrics. - 1992. - V. 1. - P. 147—150
3. Bogomolov, A. A. Temperaturnaja zavisimost' piro- i fotojelektricheskogo otklika v plenkah Sn2P2S6 / A. A. Bogomolov, O. V. Malyshkina, A. V. Solnyshkin, I. P. Raevskij, N. P. Procenko, D. N. Sandzhiev // Izv. RAN. Ser. fiz. - 1997. - Vol. 61, N 2. - P. 375—377.
4. Bogomolov, A. A. Osobennosti nestacionarnogo fototoka korotkogo zamykanija v plenkah segnetojelektrika-poluprovodnika Sn2P2S6 / A. A. Bogomolov, A. V. Solnyshkin, D. A. Kiselev, I. P. Raevskij, N. P. Procenko, D. N. Sandzhiev // FTT. - 2006. - Vol. 48, N 6. - P. 1121—1122.
5. Fridkin, V. M. / V. M. Fridkin — Fotosegnetojelektriki. - M. : Nauka, 1979. - 264 s.
6. Bogomolov, A. A. Temperaturnoe povedenie fotovol'taicheskogo i pirojelektricheskogo otklika plenok segnetojelektrikapoluprovodnika Sn2P2S6 / A. A. Bogomolov, A. V. Solnyshkin, D. A. Kiselev, I. P. Raevskij, N. P. Procenko, D. N. Sandzhiev // Poverhnost'. Rentgenovskie, sinhrotronnye i nejtronnye issledovanija. - 2008. - N 6. - P. 98—104.
7. Bogomolov, A. A. Pyroresponse of Sn2P2S6 films on aluminum substrate / A. A. Bogomolov, O. V. Malyshkina, A. V. Solnyshkin, I. P. Raevsky, N. P. Protzenko, D. N. Sandjiev // J. Korean Phys. Soc. - 1998. - V. 32. - P. S251—S252.
8. Bogomolov, A. A. Nonstationary photocurrent and pyroelectric response in aged Sn2P2S6 films / A. A. Bogomolov, A. V. Solnyshkin, D. A. Kiselev, I. P. Raevsky, N. P. Protzenko, D. N. Sandjiev // J. Europ. Ceramic Soc. - 2007. - V. 27. - P. 3835—3838.
9. Garn, L. E. Use of low-frejauency sinusoidal temperature waves to separate pyroelectric currents from nonpyroelectric currents. Part I. Theory / L. E. Garn, E. J. Sharp // J. Appl. Phys. - 1982. - V. 53, Iss. 12. - P. 8974—8979.
Language of full-text
russian
Full content