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MATERIALS SCIENCE AND TECHNOLOGY. SEMICONDUCTORS
Название Universal II—VI wide gap compound crystal growth technology
Автор N. N. Kolesnikov and A.V. Timonina
Информация об авторе N. N. Kolesnikov, e-mail: nkolesn@issp.ac.ru and A.V. Timonina, e-mail: avtim@issp.ac.ru, (ISSP Rus. Acad. Sci.)
Реферат Bulk crystals of binary wide-gap II-VI compounds (ZnSe, ZnS, ZnTe, CdSe, CdS, CdTe) and their mixtures have wide application in acousto- and optoelectronics; optics of IR-range; THz devices; manufacturing transfer, outlet and focusing optics of technological CO2-lasers; production of electrooptical devices and semiconductor detectors of ionizing radiation. The paper describes a technology of vertical zone melting under inert gas pressure that allows growing AIIBVI crystals with properties suitable for multi-purpose technical applications of these materials.
Ключевые слова Wide-gap semiconductors, II-VI compounds, crystal growth, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe.
Библиографический список 1. Kulakov, M. P. O stehiometrii kristallov selenida cinka, poluchaemyh iz rasplava / M. P. Kulakov, A. V. Fadeev // Izv. AN SSSR. Neorgan. mater. - 1981. - Vol. 17, N 9. - P. 1565—1570.
2. Kolesnikov, N. N. Izmenenie sostava kristallov selenida cinka pri zonnoj plavke / N. N. Kolesnikov, M. P. Kulakov, A. V. Fadeev // Ibid. - 1986. - Vol. 22, N 3. - P. 395—398.
3. Kulakov, M. P. Opredelenie nekotoryh svojstv rasplava selenida cinka i raschet ego sostava pri kristallizacii / M. P. Kulakov, A. V. Fadeev, N. N. Kolesnikov // Tam zhe. - 1986. Vol. 22, N 3. - P. 399—402.
4. Kolesnikov, N. N. Some properties of melts of A2B6 compounds / N. N. Kolesnikov, M. P. Kulakov, Ju. N. Ivanov // J. Cryst. Growth. - 1992. - V. 125. - P. 576.
5. A. s. SSSR № 1171695. Sposob opredelenija cinka / A. V. Fadeev, M. P. Kulakov, N. N. Kolesnikov. Publ. B. I. 1985, N 29.
6. Kolesnikov, N. N. HPVB and HPVZM shaped growth of CdZnTe, CdSe and ZnSe crystals / N. N. Kolesnikov, R. B. James, N. S. Berzigiarova, M. P. Kulakov // H-ray and gamma-ray detectors and applications IV: Proc. SPIE. - 2002. - V. 4787. - P. 93—104.
Language of full-text русский
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