MATERIALS SCIENCE AND TECHNOLOGY.
DIELECTRICS
ArticleName
Study of microinclusions in shaped
sapphire crystals
ArticleAuthors
A.V. Borodin, V.A. Borodin, V.E. Iskorostinskaya,
T.A. Steriopolo, I.I. Khodos and A.N. Nekrasov
ArticleAuthorsData
A.V. Borodin, e-mail: borodin@ezan.ac.ru, V.A. Borodin, e-mail: bor@ezan.ac.ru, V.E. Iskorostinskaya, e-mail:
kamynina@ezan.ac.ru,
T.A. Steriopolo, (FGUP EZAN); I.I. Khodos, e-mail:
chodos@iptm.ac.ru, IPTM Rus. Acad. Sci.; A.N. Nekrasov, e-mail: alex@iem.ac.ru, IEM Rus. Acad. Sci
Abstract
The paper presents results of chemical and structural analysis
of scattering centers in shaped sapphire crystals. The scattering
centers (SC) are solid phase inclusions up to 6 microns
in size. The congestion of these inclusions can form «strips»
and «cords» which considerably worsen the optical quality
of the crystals. Microanalysis of the samples has been performed
using a CAMEBAX MBX X-ray microanalyzer with a
Link AN10/55S energy-dispersive X-ray spectrometer and a
JEM-2000 FX electron microscope. The results have shown
that the scattering centers are basically amorphous aluminum
inclusions. The volume density of SC in the defective
sample is 1—2 order above that of the high optical quality
reference sample.
keywords
Optics, sapphire, defects.
References
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2. Cockayne, B. The melt growth of ohide and related single crystals / B. Cockayne // J. Cryst. Growth. - 1977. - V. 42, N 1. P. 413—426.
3. Tatarchenko, V. A. Defects in shaped sapphire crystals / V. A. Tatarchenko, T. N. Jalovets, G. A. Satunkin, L. M. Zatulovsky, L. P. Egorov, D. Ja. Kravetsky // Shaped crystal growth. - Amsterdam, 1980. - P. 335—340.
4. Tiller, V. A. Osnovnye polozhenija teorii zatverdevanija / V. A. Tiller // Teorija i praktika vyrawivanija kristallov M. : Metallurgija, 1968. - P. 347—349.
5. Novak, R. E. The production of EFG sapphire ribbon for heteroepitahial silicon substrates / R. E. Novak, R. Metzl, A. Dreeben, S. Berkman // Shaped crystal growth. - Amsterdam, 1980. - P. 143— 150.
6. Jalovec, T. N. Obrazovanie vakansionnyh por pri otzhige profilirovannyh kristallov sapfira / T. N. Jalovec, V. A. Borodin // Izv. AN SSSR. Neorgan. materialy. - 1988. - Vol. 24, N 6. - P. 946—949.
7. Wada, K. Growth and characterization of sapphire ribbon crystals / K. Wada, K. Hoshikawa // Shaped crystal growth. Amsterdam, 1980. - P. 151—159.
8. Nikolaenko, M. V. Gazovye vkljuchenija v monokristallah sapfira vyrawennyh metodom Kiropulosa / M. V. Nikolaenko, Je. V. Es'kov, A. Ju. Ignatov // VI Mezhdunar. konf. -Himija tverdogo tela i sovremennye mikro- i nanotehnologii-. - Kislovodsk ; Stavropol' : SevKavGTU, 2006. - P. 510.
9. Borodin, V. A. Real'naja struktura profilirovannyh kristallah sapfira v svjazi s uslovijami vyrawivanija / V. A. Borodin, T. A. Steriopolo, V. A. Tatarchenko, T. N. Jalovec, L. V. Bondarenko // Izv. AN SSSR. Ser. fiz. - 1985. - Vol. 49, N 12. - P. 2380—2385.
Language of full-text
russian
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