Nuclear radiation semiconductor detectors (SCD) based on germanium and silicon form the basis of the high-resolution nuclear spectroscopy for today and for the nearest future. However, despite the advantages and progress of SCD based on germanium and especially on silicon they have a number of physical limitations which make difficult their application in field and production conditions. At present it is considered that further progress of semiconductor nuclear spectroscopy is connected with the use of semiconductor compounds, having a diverse set of electrophysical parameters, as the detectors. This fact not only broadens the functional possibilities of the respective instruments but also favors the active application of the nuclear physics methods of analysis and control in different fields of science and technology. This paper defines the requirements to the semiconductor materials for efficient non-cooled X-ray and gamma radiation SCD. A brief review of domestic developments in this research area using CdTe, GaAs, HgI₂, and TlBr material has been done. It has been shown that the governing factor in building new generation X-ray and gamma radiation semiconductor detectors is a level of technology of the wide-gap semiconductor compounds.

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