The electrophysical parameters of dislocation-free silicon single crystals of various quality grades subjected to storage during 1…20 years at room temperature have been studied. It has been established that besides thermal and radiation stability of silicon to the factors influencing the operation duration of instruments, it is necessary to add its timing stability as well. Depending on the feedstock quality, growth mode and post treatment, the degradation degree of the electrophysical parameters of single crystals after long-term (more than 10 years) storage decreases in the following sequence: CZ-Si (НТЛ) - high-ohmic FZ-Si - FZ-Si (НТЛ) - high-ohmic CZ-Si – heavily doped CZ-Si. In order to avoid an unpredictable change of single crystals’ parameters of «solar quality» and the characteristics of the photoelectric transducers made on their basis, it is necessary to take measures to optimize the charge composition and the choice of an alloying element.

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