Epitaxial layers and multilayered compositions
ArticleName
Study of Nuclear Rasiation Detectors Spectra on VPE–GaAs
ArticleAuthors
G. I. Koltsov, S. I. Didenko, A. V. Chernykh, S. V. Chernykh, A. V. Sidelev
ArticleAuthorsData
G. I. Koltsov, e-mail: kgi39@mail.ru, S. I. Didenko, e-mail: sdi13@mail.ru, A. V. Chernykh, S. V. Chernykh, e-mail: chav_84@mail.ru, A. V. Sidelev, (National Research University «MISiS»)
Abstract
Specimens of GaAs detectors with various types of potential barriers have been fabricated. The high resistance working 40–45 μm n-layers with carrier concentrations of less than 1012 cm-3 have been grown by vapor phase epitaxy in a chloride transport system. The research results for the of a α-, β-, γ-source spectra measured by the detectors have been presented, a high quality of the test material for detector applications has been demonstrated and ways of further optimization of detectors on VPE-GaAs have been determined.
keywords
Gallium arsenide, АIIIВV, chemical vapor phase deposition, semiconductor detector, nuclear radiation detector, spectra.
References
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2. Horisberger, R. The bipolar silicon microstrip detector: A proposal for a novel precision tracking device / R. Horisberger // Nucl. Instrum. and Methods. - 1990. - V. 288. - P. 87—91.
3. Markov, A. V. Semi-insulating LEC GaAs as a material for radiation detectors: materials science issues / A. V. Markov, M. V. Mezhennyi, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, V. K. Eremin, E. M. Verbitskaya, V. N. Gavrin, Y. P. Kozlova, Y. P. Veretenkin, T. J. Bowles // Ibid. - 2001. - V. 466. - P. 14—24.
4. Buttar, C. M. GaAs detectors / C. M. Buttar // Ibid. - 1997. - V. 395. - P. 1—8.
5. Tyazhev, A. V. GaAs radiation imaging detectors with an active layer thickness up to 1 mm / A. V. Tyazhev, D. L. Budnitsky, O. B. Koretskaya, V. A. Novikov, L. S. Okaevich, A. I. Potapov, O. P. Tolbanov, A. P. Vorobiev // Ibid. - 2003. - V. 509. - P. 34—39.
6. Koreckaja, O. B. Detektory gamma-izluchenija na osnove arsenida gallija, kompensirovannogo hromom / O. B. Koreckaja, V. A. Novikov, L. S. Okaevich, A. I. Potapov, O. P. Tolbanov, A. V. Tjazhev // Jelektron. prom-nost'. - 2002. - N 2–3. - P. 37—39.
7. Bajko, I. Ju. Detektornye struktury na osnove arsenida gallija, vyrawennogo metodom zhidkofaznoj jepitaksii / I. Ju. Bajko, A. P. Vorob'ev, V. P. Germogenov, S. M. Guwin, A. A. Larionov, A. I. Potapov, O. P. Tolbanov, O. G. Shmakov // Ibid. - 2002. - N 2–3. - P. 46—53.
8. Bespalov, V. A. Jelektrofizicheskie svojstva GaAs sloev i osobennosti harakteristik detektorov chastic vysokih jenergij na ih osnove / V. A. Bespalov, A. V. Voroncov, A. A. Gorbacevich, V. I. Egorkin, G. P. Zhigal'skij, Je. A. Il'ichev, A. V. Kulakov, B. G. Nalbandov, V. S. Pantuev, V. I. Rasputnyj, Ju. N. Sveshnikov, S. S. Shmelev // ZhTF. - 2004. - Vol. 74, N 3. - P. 28—36.
9. Owensa, A. High resolution X-ray spectroscopy using a GaAs pixel detector / A. Owensa, M. Bavdaza, A. Peacock, H. Andersson, S. Nenonen, M. Krumrey, A. Puig // Nucl. Instrum. and Methods. - 2002. - V. 479. - P. 531—534.
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russian
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