Undoped and indium doped Pb_0,8Sn_0,2Te epitaxial layers have been synthesized by liquid phase epitaxy. Depth profiles of free carriers and indium in the epitaxial layer have been studied. We have found that a uniform concentration region can be provided at depths of down to 15 um, and the conductivity type of the epitaxial layer at 77.3 K can be changed by varying indium concentration. We show that liquid phase epitaxy is more suitable for the reproducible synthesis of epitaxial layer with a preset free carrier concentration, including for terahertz range detectors.

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