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| Materials science and technology. Semiconductors | |
| ArticleName | Use of silicon tetrachloride hydrogenation techniques in polycrystalline silicon production |
| ArticleAuthor | V. M. Ivanov, Yu. V. Trubitsin |
| ArticleAuthorData | V. M. Ivanov and Yu. V. Trubitsin, Classical Private University, Ukraine |
| Abstract | This work is an analysis of the modern condition of semiconductor polycrystalline silicon production. The utilization of the silicon tetrachloride (STC) formed in the production as a by-product is one way to reduce polysilicon costs. The modern technology foresees the employment of silicon tetrachloride hydrogenation to trichlorosilane which is recirculated to the polysilicon manufacture stage. The present condition of the STC hydrogenation problem is described. Basic methods of the hydrogenation are analysed. The inference is made that at present the catalytic hydrogenation is more perspective for further investigation and industrial employment. |
| keywords | Polysilicon, silicon tetrachloride, hydrogenation, trichlorosilane, conversion degree, activation, chemical reducers, converter, plasma generator, plasma chemical reaction. |
| References | 1. Ivanov, V. M. Perspektivnost' sozdaniya zamknutogo proizvodstva polikristallicheskogo kremniya / V. M. Ivanov, YU. V. Trubitsin // Novi tekhnologії. - 2010. - № 1. - S. 53—58. 2. Sivoshinskaya, T. I. Pererabotka tetrakhlorida kremniya, obrazuyushchegosya v proizvodstve poluprovodnikovogo kremniya / T. I. Sivoshinskaya, I. V. Grankov, YU. P. SHabalin, L. S. Ivanov — M. : TSNIItsvetmet ekonomiki i informatsii, 1983. — 43 s. (Ser. Proizvodstvo redkikh metallov i poluprovodnikovykh materialov). 3. Dement'ev, YU. S. Issledovanie struktury kremnievykh sterzhney, obrazuyushchikhsya pri vodorodnom vosstanovlenii ego khloridov: diss. … kand. tekhn. nauk. / YU. S. Dement'ev — M., 1969. 4. Trubitsin, YU. V. Izuchenie povedeniya mnogokomponentnoy sistemy Si—H—Cl v protsesse gidrirovaniya tetrakhlorida kremniya / YU. V. Trubitsin, S. V. Zverev, S. L. Nagornyy // Skladnі sistemi і protsesi. — 2002. — № 2. — S. 54—61. 5. Trubіtsin, V. YU. Modelyuvannya y analіtichno—rozrakhunkove doslіdzhennya protsesu gіdruvannya tetrakhloridu kremnіyu / V. YU. Trubіtsin, D. І. Levіnzon, YU. V. Trubіtsin // Novіtnі tekhnologії. — 2005. — № 1—2 (7—8). — S. 21—32. 6. 4th Solar Silicon Conf. April 3, 2007; M, O, C, Münich (Germany), 2007. 7. Pat. 4340574 USA, MPK S01V 33/04. Process for the production of ultrahigh purity silane with recycle from separation columns / L. M. Coleman. 20 Jul. 1982. 8. Pat. 4309259 USA, MPK S01V 33/107. High pressure plasma hydrogenation of silicon tetrachloride. 05.01.1982. Sarma K. R. 9. Korneev, R. A. Razrabotka i issledovanie metoda sinteza trikhlorsilana po reaktsii gidrirovaniya tetrakhlorida kremniya v vodorodnoy plazme: Diss. … kand. khim. nauk. / R. A. Korneev — N. Novgorod, 2007. |
| Language of full-text | russian |
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