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| Epitaxial layers and multilayered compositions | |
| ArticleName | Effect of molecular beam epitaxy conditions on the structure and properties of silicon on sapphire layers |
| ArticleAuthor | D. A. Pavlov, P. A. Shilyaev, E. V. Korotkov, N. O. Krivulin, A. V. Nezhdanov, S. M. Plankina, E. A. Pitirimova, M. V. Romashova |
| ArticleAuthorData | D. A. Pavlov, P. A. Shilyaev, E. V. Korotkov, N. O. Krivulin, A. V. Nezhdanov, S. M. Plankina, E. A. Pitirimova, M. V. Romashova, University of Nizhniy Novgorod |
| Abstract | Experimental results illustrating the effect of molecular beam epitaxy (MBE) conditions on structure and properties of silicon on sapphire (SOS) layers are reported in this paper. These results have been obtained using atomic force microscopy and reflected high energy electron diffraction. We also show that SOS study using the method of scanning confocal Raman spectroscopy allows one to reveal the depth of the layer defects distribution heterogeneity, and this technique is recommended as the nondestructive method of studying the crystalline structure of the layers. The optimum deposition temperature for producing perfect silicon layers with a thickness of 500 nm or less is 700 °С. |
| keywords | Silicon on sapphire, atomic-force microscopy, Raman scattering, molecular beam epitaxy. |
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| Language of full-text | russian |
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