• Acquire
MATERIALS SCIENCE AND TECHNOLOGY. SEMICONDUCTORS
ArticleName
Rare earth metal diffusion doping of silicon
ArticleAuthors
N. V. Latukhina, V. M. Lebedev
ArticleAuthorsData
N. V. Latukhina, Samara State University; V. M. Lebedev, St. Petersburg B.P. Konstantinov Institute of Nuclear Physics, Russian Academy of Sciences
Abstract
We have studied the properties of silicon diffusion doped with rare earth metals (Dy, Lu, Sm, Gd, Yb, Y, Sc, Ho and Er). Diffusion was from a rare earth metal oxide film on the surface of the silicon wafer. Rare earth metal profiles in silicon surface layers have been studied with Rutherford backscattering and deuteron nuclear reaction spectroscopy. The VC characteristics, surface resistivity and carrier mobility have been measured during stepwise layer etching to determine the hole profiles in the doped silicon layers. We show that the concentration of all the rare earth elements studied in the silicon surface layers is far above the concentration of ionized acceptors.
keywords
Silicon, diffusion, doping.
References

1. Sobolev, N. A. Svetoizluchayushchie struktury Si:Er. Tekhnologiya i fizicheskie svoystva. / N. A. Sobolev // FTP. - 1995. - T. 29, vyp. 7. - S. 1153—1175.
2. Aleksandrov, O. V. Elektrofizicheskie svoystva sloev kremniya, implantirovannykh ionami erbiya i kisloroda v shirokom diapazone doz i termoobrabotannykh v razlichnykh temperaturnykh rezhimakh / O. V. Aleksandrov, A. O. Zakhar'in, N. A. Sobolev // FTP. - 2002. - T. 36, vyp. 3. - S. 379—382.
3. Aleksandrov, O. V. Melkie aktseptornye tsentry, obrazuyushchiesya pri diffuzii erbiya v kremniy / O. V. Aleksandrov, V. V. Emtsev, D. S. Poloskin, N. A. Sobolev, E. I. SHek // FTP. - 1994. - T. 28, vyp. 11. - S. 2045—2048.

4. Zaynabidinov, S. Diffuziya erbiya v kremniy / S. Zaynabidinov, D. E. Nazirov, A. ZH. Akbarov, A. A. Iminov, T. M. Toshtemirov // Pis'ma v ZHTF. - 1998. - T. 24, № 2. - S. 68—71.
5. Masterov, V. F. Primesnye atomy erbiya v kremnii / V. F. Masterov, F. S. Nasredinov, P. P. Seregin, E. I. Terukov, M. M. Mezdrogina. // FTP. - 1998. - T. 32, vyp. 6. - S. 708—711.
6. Gavrilov, G., Krivchitch, A., Lebedev, V. Application of nuclear reaction. Analysis for aging investigations of detectors // Nucl. Instr.Meth. A. - 2003. - V. 515. - P. 108—117.
7. Gamarts, A. E. Opredelenie profilya diffuzii kisloroda v polikristallicheskikh sloyakh selenida svintsa metodami yadernogo mikroanaliza / A. E. Gamarts, V. M. Lebedev, V. A. Moshnikov, D. B. CHesnokova // FTP. - 2004. - T. 38, vyp. 10. - S. 1195—1198.
8. Lebedev, V. M. Analiticheskiy kompleks dlya issledovaniya materialov metodami yadernogo mikroanaliza / V. M. Lebedev, YU. G. Luk'yanov, V. A. Smolin // Tr. KHІІІ Mezhdunar. konf. po elektrostaticheskim uskoritelyam. - Obninsk (Rossiya), 2001. - S. 60—66.
9. Latukhina, N. V. Raspredelenie komponentov v strukturakh kremniy - oksid kremniya i kremniy - oksid redkozemel'nogo elementa / N. V. Latukhina, V. M. Lebedev // Pis'ma v ZHTF. - 2005. - T. 31, vyp. 13. - S. 58—64.
10. ZHuravel', L. V. Vliyanie legirovaniya redkozemel'nymi elementami na strukturu poverkhnostnogo sloya kremniya / L. V. ZHuravel', N. V. Latukhina, E. YU. Blytushkina // Izv. vuzov. Materialy elektron. tekhniki. - 2004. - № 3. - S. 72—74.
11. Latukhina, N. V. Rol' mikrodeformatsiy pri poroobrazovanii v kremnii, legirovannom redkozemel'nymi elementami / N. V. Latukhina, A. V. Volkov, L. V. ZHuravel', V. M. Lebedev // Tr. tret'ey Mezhdunar. nauchno-tekhn. konf. «Metallofizika, mekhanika materialov, nanostruktur i protsessov deformirovaniya «Metalldeform-2009». - Samara, 2009. - T. 1. - S. 30—34.
12. Latukhina, N. V. Legirovanie kremniya erbiem metodom diffuzii / N. V. Latukhina, V. M. Lebedev, L. V. ZHuravel' YU. I. Vishnyakova, E. I. Zinov'ev // Izv. vuzov. Materialy elektron. tekhniki. - 2009. - № 2. - S. 13—17.

Language of full-text
russian
Full content
Buy

Back