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Журналы →  Materialy Elektronnoi Tekhniki →  2011 →  №1 →  Назад

MATERIALS SCIENCE AND TECHNOLOGY. SEMICONDUCTORS
Название Fabrication of CdZnTe–based substrates using polyhedral methylsilsesquioxanes
Автор P. A. Averichkin, Y. B. Andrusov, M. B. Grishechkin, I. A. Denisov, N. A. Smirnova
Информация об авторе P. A. Averichkin, Y. B. Andrusov, M. B. Grishechkin, I. A. Denisov, N. A. Smirnova, OAO Giredmet
Реферат
The influence of chemical−mechanical polishing (CMP) conditions on the height and homogeneity of microroughness over CdZnTe plate substrate area has been investigated. Two−step CMP modes have been developed to provide the values of surface roughness parameter (Rms) of between 2 and 8 nanometers. The addition of polyhedral methylsilsesquioxanes in the preliminary etching composition and the use of bromine−hydrobromic acid−glycerine etching at the final CMP stage provide for a homogeneous distribution of the Rms parameter values along the surface of 45 mm diameter substrates.
Ключевые слова Cadmium−zinc telluride, substrate, chemical−mechanical polishing, methylsilsesquioxane.
Библиографический список
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Language of full-text русский
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