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MATERIALS SCIENCE AND TECHNOLOGY. SEMICONDUCTORS
ArticleName Fabrication of CdZnTe–based substrates using polyhedral methylsilsesquioxanes
ArticleAuthor P. A. Averichkin, Y. B. Andrusov, M. B. Grishechkin, I. A. Denisov, N. A. Smirnova
ArticleAuthorData P. A. Averichkin, Y. B. Andrusov, M. B. Grishechkin, I. A. Denisov, N. A. Smirnova, OAO Giredmet
Abstract
The influence of chemical−mechanical polishing (CMP) conditions on the height and homogeneity of microroughness over CdZnTe plate substrate area has been investigated. Two−step CMP modes have been developed to provide the values of surface roughness parameter (Rms) of between 2 and 8 nanometers. The addition of polyhedral methylsilsesquioxanes in the preliminary etching composition and the use of bromine−hydrobromic acid−glycerine etching at the final CMP stage provide for a homogeneous distribution of the Rms parameter values along the surface of 45 mm diameter substrates.
keywords Cadmium−zinc telluride, substrate, chemical−mechanical polishing, methylsilsesquioxane.
References
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6. Ivanits’ka, V. G. Chemical etching of CdTe in Aqueous solutions of H2O2-HI-citric acid / V. G. Ivanits’ka, P. Moravec, J. Franc, Z. F. Tomashik, , V. M. Tomashik, P. I. Feychuk, L. P. Shcherbak, K. Mašek, P. Höschl// Ibid. - 2007. - V. 36, N 8. - P. 1021—1024.
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