An investigation into the influence of implantation conditions (dose, energy and target temperature) of He⁺ ions on the damage structure of GaAs (100) substrates was performed by high−resolution X−ray diffraction, scanning electron microsopy and Nomarski microscopy. Blistering is shown to become apparent as characteristic features of isolines in reciprocal space maps. We propose that the formation of the defects yielding a characteristic X−ray diffuse scattering is defined by the behavior of implanted atoms in the GaAs matrix, depending on two competing processes: 1) formation of the gas−filled bubbles; 2) diffusion of the He atoms from the bubbles towards the surface and deep into the GaAs substrate. We conclude that the gas−filled bubbles change the structure of the irradiated layer, resulting in the formation of strained crystalline areas of the GaAs matrix.

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