N. B. Beisenkhanov, Leading Researcher e-mail: beisen@sci.kz, Institute of Physics and Technology, Almaty.

In the paper, an influence of hydrogen glow discharge plasma treatment on structural properties of SiC_1.4 and SnO_x thin films is studied. A SiC_1.4 layer is formed by multiple implantation of carbon ions with energies 40, 20, 10, 5 and 3 keV into silicon substrate. It was found that treatment by hydrogen plasma leads to complete disintegration of silicon crystallites in a film-substrate transition layer (SiC—Si) and degradation of structural perfection of the silicon carbide crystallites in the SiC_1.4 layer. SnO_x films of thickness of about ~350 nm were obtained by magnetron sputtering deposition on glass substrate in Ar-O₂ atmosphere. It is shown that phase composition and structure of SnO_х films essentially depend on pressure of Ar-O₂ mixture in the chamber within the limits of 1.0–2.7 Pa. Different effect of hydrogen and oxygen plasma on both segregation and disintegration processes of polycrystalline phases in SnO_х films is shown. It is obvious that hydrogen plasma influence is spread to all film depths (~200–300 nm), causing silicon crystallites or tin oxide disintegration. A large number of hydrogen plasma ions penetration through a solid film presupposes film material saturation by hydrogen atoms.

Author is very grateful to doctor of science K. Kh. Nusupov, candidate of science D. M. Mukhamedshina and candidate of science K. A. Mit' for assistance in the experiment and Scientific Committee of the Ministry of Education and Science of the Republik of Kazakhstan for the research financing.

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