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| MATERIALS SCIENCE AND TECHNOLOGY. SEMICONDUCTORS | |
| Название | EFFECT OF REACTANT INTRODUCTION PARAMETERS ON SILICON ROD TEMPERATURE IN SIEMENS PROCESS |
| Автор | V.A. Gavrilov, P.M. Gavrilov and P.P. Turchin |
| Информация об авторе | V.A. Gavrilov, P.M. Gavrilov, FGUP Mining and Chemical Factory, P.P. Turchin, FGOU VPO Siberian Federal university |
| Реферат | This paper presents results of study of changes in silicon rod temperature depending on details of SiHCl3 and hydrogen introduction into the Siemens reactor. We have found a correlation between changes of reactant introduction into the reactor and silicon rods temperature that are not always attributable to convective heat transfer. Therefore, we have assumed that these rod temperature deviations are governed by changes in the clarity of the reactor gas medium in the nearest infrared region and the respective effect of the reactor optical characteristics on emanation heat transfer between the water-cooled reactor walls and the silicon rods. To test this hypothesis, we have recorded infrared region transmission spectra of a mixture that included SiHCl3, HCl and SiO2. A broad absorption band was found in the range of 2400—3100 cm-1 (λ = 3.2— 4.2 μm) caused by the presence of hydrogen chloride in gas-vapor mixture. This absorption band allows us to explain the heat transfer during short-term changes in the parameters of reactant introduction into the hydrogen reduction unit and to conclude that heat transfer in the Siemens reactor during short-term changes of gas-vapor mixture introduction parameters is mainly determined by emanation heat transfer. |
| Ключевые слова | Silicon, Siemens process, hydrogen reduction, gas-vapor mixture, chlorides, hydrogen, convective heat transfer, emanation heat transfer, transmission spectra, infrared region. |
| Language of full-text | русский |
| Полный текст статьи | Получить |
