MATERIALS SCIENCE AND TECHNOLOGY.
SEMICONDUCTORS
Название
EFFECT OF REACTANT INTRODUCTION PARAMETERS
ON SILICON ROD TEMPERATURE IN
SIEMENS PROCESS
Авторы
V.A. Gavrilov, P.M. Gavrilov and P.P. Turchin
Информация об авторах
V.A. Gavrilov, P.M. Gavrilov,
FGUP Mining and Chemical Factory, P.P. Turchin, FGOU VPO
Siberian Federal university
Реферат
This paper presents results of study of changes in
silicon rod temperature depending on details of SiHCl3
and hydrogen introduction into the Siemens reactor. We
have found a correlation between changes of reactant
introduction into the reactor and silicon rods temperature
that are not always attributable to convective heat
transfer. Therefore, we have assumed that these rod
temperature deviations are governed by changes in the
clarity of the reactor gas medium in the nearest infrared
region and the respective effect of the reactor optical
characteristics on emanation heat transfer between the
water-cooled reactor walls and the silicon rods.
To test this hypothesis, we have recorded infrared
region transmission spectra of a mixture that included
SiHCl3, HCl and SiO2. A broad absorption band was
found in the range of 2400—3100 cm-1 (λ = 3.2—
4.2 μm) caused by the presence of hydrogen chloride
in gas-vapor mixture. This absorption band allows us to
explain the heat transfer during short-term changes in
the parameters of reactant introduction into the hydrogen
reduction unit and to conclude that heat transfer
in the Siemens reactor during short-term changes of
gas-vapor mixture introduction parameters is mainly
determined by emanation heat transfer.
Ключевые слова
Silicon, Siemens process, hydrogen
reduction, gas-vapor mixture, chlorides, hydrogen,
convective heat transfer, emanation heat transfer,
transmission spectra, infrared region.
Language of full-text
русский
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