PARAMETERS OF ACTIVATION PROCESSES IN DIAMOND, SILICON AND GERMANIUM

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MATERIALS SCIENCE AND TECHNOLOGY. DIELECTRICS
Название	PARAMETERS OF ACTIVATION PROCESSES IN DIAMOND, SILICON AND GERMANIUM
Автор	M.N. Magomedov
Информация об авторе	M.N. Magomedov, Institute for Geothermal Problems, Dagestan Research Center, Russian Academy of Sciences
Реферат	Vacancy formation parameters have been determined for carbon subgroup crystals, i.e. C (diamond), Si, Ge, α-Sn and Pb. A method has been suggested that takes into account both the low temperature quantum effects and high temperature delocalization of atoms. It has been shown that if the delocalization of atoms is taken into account, vacancy formation enthalpy, enthropy and formation volume increase. At low temperatures, the vacancy formation parameters are strongly temperature sensitive, and the vacancy formation enthropy becomes negative. At high temperatures, the model is in a good agreement with experimental data and theoretical assessments made by other authors.
Ключевые слова	Diamond, silicon, germanium, activation processes, vacancy formation parameters.
Language of full-text	русский
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