MATERIALS SCIENCE AND TECHNOLOGY.
DIELECTRICS
ArticleName
PARAMETERS OF ACTIVATION PROCESSES IN
DIAMOND, SILICON AND GERMANIUM
ArticleAuthor
M.N. Magomedov
ArticleAuthorData
M.N. Magomedov, Institute for Geothermal Problems,
Dagestan Research Center, Russian Academy
of Sciences
Abstract
Vacancy formation parameters have been determined
for carbon subgroup crystals, i.e. C (diamond), Si, Ge, α-Sn and Pb.
A method has been suggested that takes into account
both the low temperature quantum effects and high
temperature delocalization of atoms. It has been shown
that if the delocalization of atoms is taken into account,
vacancy formation enthalpy, enthropy and formation
volume increase. At low temperatures, the vacancy
formation parameters are strongly temperature sensitive,
and the vacancy formation enthropy becomes
negative. At high temperatures, the model is in a good
agreement with experimental data and theoretical assessments
made by other authors.
keywords
Diamond, silicon, germanium, activation
processes, vacancy formation parameters.
Language of full-text
russian
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