MODELING OF PROCESSES AND MATERIALS
Название
CHOICE OF REACTOR CHAMBER FOR POLYCRYSTALLINE
SILICON GROWTH
Авторы
D.S. Brovin, A.A. Lovtsus and M.E. Rudinsky
Информация об авторах
D.S. Brovin, A.A. Lovtsus and M.E. Rudinsky,
Soft–Impact Ltd, Saint–Petersburg State
Polytechnical University
Реферат
Polycrystalline silicon is widely used in the modern
semiconductor industry. The Siemens process is a
dominant technique in «solar» and «electronic» silicon
production. The choice of optimal design of the reactor
chamber for silicon chlorosilanes reduction by this
process remains one of the many unsolved problems.
The turbulent submerged jet theory and numerical
simulation have been used to analyze these problems.
Natural and forced convection controlled reactor operation
modes have been discussed.
Ключевые слова
Polycrystalline silicon, Siemens process,
numerical simulation, turbulence, heat transfer.
Language of full-text
русский
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