NANOMATERIALS AND NANOTECHNOLOGY
Название
ESTIMATING ANALYSIS OF CONDITIONS FOR
DEFECT–FREE QUANTUM DOTS FORMATION IN InxGa1–xAs/GaAs HETEROSTRUCTURES
Авторы
R.Kh. Akchurin, N.T. Vagapova
Информация об авторах
R.Kh. Akchurin, N.T. Vagapova, Moscow State
Academy of Fine Chemical Technology
Реферат
Based on the energy balance model we have calculated
the critical thicknesses of misfit dislocations formation
and the 2D-3D transition by Stranski—Krastanov
mechanism for
InxGa1-xAs/GaAs growth. The limits of
these parameters and the range of solid solution compositions
allowing the growth of defect-free quantum
dots have been estimated.
Ключевые слова
Heterostructure, quantum dots, epitaxial
growth, Stranski—Krastanov mechanism, InxGa1-xAs/
GaAs.
Language of full-text
русский
Полный текст статьи