A brief overview of the problems of grown−in microdefects in dislocation−free silicon single crystals has been provided. We show that the kinetic model of the growth and coalescence of oxygen and carbon precipitates as well as the kinetic models of their formation constitute a single model of precipitation during cooling of dislocation−free silicon single crystals after growth in the 1410—30 °С temperature range. The precipitation model and the kinetic model of the formation and growth of interstitial dislocation loops and vacancy micropores represent a mathematical apparatus allowing one to theoretically describe the formation and transformation of microdefects in dislocation−free silicon single crystals of any diameter obtained by the float−zone and Czochralski methods.

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