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MATERIALS SCIENCE AND TECHNOLOGY. SEMICONDUCTORS
Название Surface layers structure and electronic structure of silicon plates after low–energy hydrogen and argon plasma treatment
Автор S. Y. Turishchev, V. A. Terekhov, E. V. Parinova, O. V. Korolik, A.V. Mazanik, A. K. Fedotov, I. V. Ivashkevich, N. I. Staskov
Информация об авторе S. Y. Turishchev, V. A. Terekhov, E. V. Parinova, Voronezh State University; O. V. Korolik, A.V. Mazanik, A. K. Fedotov, Belarusian State University; I. V. Ivashkevich, N. I. Staskov, Mogilev State University, Belarus.
Реферат

Investigations of the electronic structure in the surface layers of single crystal silicon plates exposed to low energy ion−beam treatment in hydrogen and argon as well as a structural study of these layers have been carried out using ultrasoft X−ray spectroscopy (including synchrotron irradiation) and spectral ellipsometry techniques. We show that the treatment produces surface layers of silicon oxide with thicknesses greater than those of natural silicon oxide. The several nanometers thick surface layers contain disordered (amorphous) elementary silicon. We suppose that clustering of the surface layers can occur as a result of the plasma treatment.
Ключевые слова Electronic structure, silicon, plasma treatment, ultrasoft X−ray spectroscopy, ellipsometry.
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Language of full-text русский
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