• Покупка статей
  • Telegram_OreMet
Скрыть↑
Журналы →  Materialy Elektronnoi Tekhniki →  2011 →  №3 →  Назад

MATERIALS SCIENCE AND TECHNOLOGY. SEMICONDUCTORS
Название Elaboration of droplet epitaxy technique for quantum dot arrays formation in InAs/GaAs system under MOCDV
Автор R. Kh. Akchurin, I. A. Boginskaya, A. A. Marmalyuk, A. A. Ladugin, M. A. Surnina
Информация об авторе R. Kh. Akchurin; I. A. Boginskaya, Moscow State Academy of Fine Chemical Technology; A. A. Marmalyuk; A. A. Ladugin, «Sigm Plus» Co; M. A. Surnina, Moscow State Academy of Fine Chemical Technology.
Реферат

The initial stage of quantum dots formation in the InAs/GaAs system by the droplet epitaxy method has been investigated. Results on the influence of MOCVD conditions on the size and density of the nanoscale indium droplets array deposited on GaAs(100) substrates have been presented. The possibility of using indium evaporation to control the size of deposited droplets has been demonstrated. The reasonable heat treatment temperature range (300—400 oC) has been chosen based on the calculation of the evaporation rate of indium and the temperature dependence of the contact angle of the substrate. By calculating the heterogeneous equilibrium in the In—Ga—As system we show that changes in the composition of deposited droplets due to possible substrate dissolution at this temperatures is extremely small.
Ключевые слова InAs/GaAs heterostructure, quantum dots, MOCVD, droplet epitaxy.
Библиографический список

1. Koguchi, N. New MBE growth method for InSb quantum well boxes / N. Koguchi, S. Takahashi, T. Chikyow // J. Cryst. Growth. − 1991. − V. 111. − P. 688—692.
2. Kim, J. S. Near room temperature droplet epitaxy for fabrication of InAs quantum dots / J. S. Kim, N. Koguchi // Appl. Phys. Lett. − 2004. − V. 85, N 24. − P. 5893—5895.
3. Wang, Z. M. Self−organization of InAs quantum−dot clusters directed by droplet homoepitaxy / Z. M. Wang, B. Liang, K. A. Sablon, J. Lee, Y. I. Mazur, N. W. Strom, G. J. Salamo // Small. − 2007. − V. 3, N 2. − P. 235—238.
4. Alonso-González, P. Formation and optical characterization of single InAs quantum dots grown on GaAs nanoholes / P. Alonso−González, B. Alen, D. Faster Y. González, L. González, J. Martínez−Pastor // Appl. Phys. Lett. − 2007. − V. 91. − P. 163104−6.
5. Sablon, K. A. Configuration control of quantum dot molecules by droplet epitaxy / K. A. Sablon, H. J. Lee, Z. M. Wang, J. H. Shultz, G. J. Salamo // Appl. Phys. Lett. − 2008. − V. 92. − P. 203106−8.
6. Zhao, C. Study of the wetting layer of InAs/GaAs nanorings grown by droplet epitaxy / C. Zhao, Y. H. Chen, B. Hu, C. G. Tang, Z. G. Wang, F. Ding // Appl. Phys. Lett. − 2008. − V. 92. − P. 063122−4.
7. Tong, C. Z. Investigation of the fabrication mechanism of self−assembled GaAs quantum rings grown by droplet epitaxy / C. Z. Tong, S. F. Yoon // Nanotechnology. − 2008. − V. 19. − P. 365604−7.
8. Lee, J. H. Various quantum− and nano−structures by III—V droplet epitaxy on GaAs substrates / J. H. Lee, Z. M. Wang, E. S. Kim, N. Y.Kim, S. H. Park, G. J. Salamo // Nanoscale Res. Lett. − 2010. − V. 5. − P. 308—314.
9. Stringfellow, G. B. // Organometallic vapor phase epitaxy: Theory and practice / G. B. Stringfellow. − London : Acad. Press, 1999. − P. 228.
10. Akchurin, R. Kh. Issledovanie vozmozhnosti formirovaniya massivov kvantovykh tochek v sisteme InAs/GaAs kapel'nym metodom v usloviyakh MOS−gidridnoy epitaksii / R. Kh. Akchurin, I. A. Boginskaya, N. T. Vagapova, A. A. Marmalyuk, A. A. Panin // Pis'ma v ZhTF. − 2010. − T. 36, vyp. 1. − C. 10—16.
11. Akchurin, R. Kh. Fiziko−khimicheskie aspekty formirovaniya kvantovykh tochek v sisteme InAs/GaAs kapel'nym metodom v usloviyakh MOS−gidridnoy epitaksii / R. Kh. Akchurin, I. A. Boginskaya, N. T. Vagapova, A. A. Marmalyuk, M. A. Ladugin // Pis'ma v ZhTF. − 2010. − T. 36, vyp. 15. − C. 82—88.

12. Akchurin, R. Kh. Kapel'nyy metod formirovaniya massivov kvantovykh tochek v sisteme InAs/GaAs v usloviyakh MOS−gidridnoy epitaksii / R. Kh. Akchurin, I. A. Boginskaya, N. T. Vagapova, A. A. Marmalyuk, M. A. Ladugin, M. A. Surnina // Tez. dokl. XIV Natsional'noy konf. po rostu kristallov «NKRK−2010». − M. : IK RAN, 2010. − T. 2. − S. 95.
13. Nesmeyanov, An. N. Davlenie para khimicheskikh elementov / An. N. Nesmeyanov. − M. : Izd−vo AN SSSR, 1961. − 367 c.
14. Moyle, M. Laboratory studies of water droplet evaporation / M. Moyle, P. M. Smidansky, D. Lamb // 12th Conf. on Cloud Physics. − Madison (WI), 2006. − P. 2—37.

15. Krapukhin, V. V. Tekhnologiya materialov elektronnoy tekhniki / V. V. Krapukhin, I. A. Sokolov, G. D. Kuznetsov. − M. : MISIS, 1995. − 440 c.
16. Barash, L. Yu. Evaporation and fluid dynamics of a sessile drop of capillary size / L. Yu. Barash, T. P. Bigioni, V. M. Vinokur, L. N. Shchur // Phys. Rev. E. − 2009. − V. 79. − R. 046301−16.
17. Summ, B. D. Fiziko−khimicheskie osnovy smachivaniya i rastekaniya / B. D. Summ, Yu. V. Goryunov. − M. : Khimiya, 1976. − 232 s.
Language of full-text русский
Полный текст статьи Получить
Назад