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MATERIALS SCIENCE AND TECHNOLOGY. SEMICONDUCTORS
ArticleName Elaboration of droplet epitaxy technique for quantum dot arrays formation in InAs/GaAs system under MOCDV
ArticleAuthor R. Kh. Akchurin, I. A. Boginskaya, A. A. Marmalyuk, A. A. Ladugin, M. A. Surnina
ArticleAuthorData R. Kh. Akchurin; I. A. Boginskaya, Moscow State Academy of Fine Chemical Technology; A. A. Marmalyuk; A. A. Ladugin, «Sigm Plus» Co; M. A. Surnina, Moscow State Academy of Fine Chemical Technology.
Abstract

The initial stage of quantum dots formation in the InAs/GaAs system by the droplet epitaxy method has been investigated. Results on the influence of MOCVD conditions on the size and density of the nanoscale indium droplets array deposited on GaAs(100) substrates have been presented. The possibility of using indium evaporation to control the size of deposited droplets has been demonstrated. The reasonable heat treatment temperature range (300—400 oC) has been chosen based on the calculation of the evaporation rate of indium and the temperature dependence of the contact angle of the substrate. By calculating the heterogeneous equilibrium in the In—Ga—As system we show that changes in the composition of deposited droplets due to possible substrate dissolution at this temperatures is extremely small.
keywords InAs/GaAs heterostructure, quantum dots, MOCVD, droplet epitaxy.
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