It has been established that absorbed light spectral composition influences the magnitude and temperature dependence of the photoconductivity in a−Si : H films. This influence is connected with different generation types, i.e. interband or mixed generation, that also includes electron generation from the valence band tail. Changing the generation type affects the recombination rate of electrons due to a change in the electron occupation of the recombination levels, i.e. silicon dangling bonds and valence tail levels. We show that electron recombination on the valence band tail levels may prevail up to room temperature in the layered films with a low concentration of dangling bonds in the case of mixed generation. This may increase the photoconductivity at near room temperatures.

1. Kurova, I. A. Elektricheskie i fotoelektricheskie svoystva sloistykh plenok a-Si : H i vliyanie na nikh termicheskogo otzhiga / I. A. Kurova, N. N. Ormont, E. I. Terukov, I. N. Trapeznikova, V. P. Afanas'ev, A. S. Gudovskikh // FTP. - 2001. - T. 35, № 3. - S. 367—370.
2. Kurova, I. A. Osobennosti fotoelektricheskikh svoystv sloistykh plenok amorfnogo gidrirovannogo kremniya / I. A. Kurova, N. N. Ormont // FTP. - 2010. - T 44, № 12. - S. 1624—1628.
3. Tran, M. Q. On thermal quenching of photoconductivity in hydrogenated amorphous silicon. / M. Q. Tran // Phil. Mag. B. - 1995. - V. 72, N 1. - P. 35—66.

4. Merazga, A. Numerical simulation of the steady state photoconductivity in hydrogenated amorphous silicon including localized state electron hopping / A. Merazga, S. Tobbeche, C. Main, A. al-Shahrani, S. Reynolds // J. Phys.: Condens. Matter. - 2006. - V. 18. - P. 3721—3734.
5. Afanas'ev, V. P. Strukturnye osobennosti i svoystva plenok a-Si : H, poluchennykh metodom tsiklicheskogo osazhdeniya / V. P. Afanas'ev, F. S. Gudovskikh, O. I. Kon'kov, M. M. Kazanin, K. V. Kougiya, A. A. Sazonov, I. N. Trapeznikova, E. I. Terukov // FTP. - 2000. - T. 34, № 4. - S. 492—495.