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EPITAXIAL LAYERS AND MULTILAYERED COMPOSITIONS
Название Ion implantation into the p–CdxHg1–xTe heteroepytaxial layers and crystals
Автор A. V. Voitsekhovskii, N. Kh. Talipov
Информация об авторе

Tomsk State University

A. V. Voitsekhovskii

 

Peter the Great Academy of the Strategic Missile Force

N. Kh. Talipov

Реферат

The feature of distribution of a donor−like centers in the ion implanted p−Hg1−xCdxTe (MCT) bulk crystals and geterostructures, grown by molecular beam epitaxy (MBE) is presented. Boron ion implantation was performed in a wide range of doses, energies and current densities. Either abrupt n+/p–junction or n+/n/p–structures were formed both bulk crystals and geteroepitaxial layers depending on the implantation regimes and composition of MBE MCT. A model of the deep converted layers formation during ion implantation into the MCT was developed. The experimental validation of a model was carried out.

Ключевые слова Ion implantation, HgCdTe, defects, molecular beam epytaxy
Библиографический список

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