National Research University «MISiS»

K. V. Gochua

The technological conditions allowing obtaining sufficiently homogeneous large diameter (30 mm) ingots of thermoelectric materials (TEM) based on Bi₂Te₃ and having a favourable texture for implementation of the electrophysical properties typical for rhombohedral crystal lattice are worked out. It is revealed that in the quaternary p−type solid solutions (Bi₁Sb₁Te_3−xSe_x) produced by the vertical directed crystallization without adding excess Te, the favorable texture for implementation of the electrophysical properties in which the cleavage planes diverge from the axis of the ingot for 5 ang. deg. is obtained.

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