Institute of Semiconductor Physics, SB RAS

A. N. Karpov, S. V. Usenkov, N. L. Shwartz, A. V. Rzhanov

Novosibirsk State Technical University

E. A. Mikhantiev

The process of silicon nanocluster formation during annealing of single SiO layers and multilayer SiO₂—SiO—SiO₂ structures or after Si deposition on silicon dioxide substrate was studied. A kinetic Monte Carlo model of silicon nanocluster formation taking into account silicon monoxide formation and dissociation was suggested. Not only temperature and annealing time but also SiO layer thickness determined the nanocluster sizes when SiO₂—SiO—SiO₂ structures were annealed. Simulation demonstrated that silicon monoxide forming in the Si—SiO₂ system at high temperatures plays an important role in the process of nanocluster formation. Silicon monoxide also accounts for some specific features of 3D silicon islands formation during silicon deposition on silicon dioxide surface.

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