National Research University «MISiS»

I. M. Anfimov, S. P. Kobeleva, M. D. Malinkovich, I. V. Shchemerov, O. V. Toropova, Yu. N. Parkhomenko

Temperature dependance of the resistivity of carbon−silicon 1 mkm film containing nanocise tungsten particles were investigated. Resistivity measurements were carried out by contact method in the temperature range 20—200 °С for films with resistivity at room temperature of about 0,03—15 Ohm ⋅ cm. Decreasing of the resistivity with temperature was observed. An activation and a tunnel mechanisms of conductivity were proposed. Tunnel fraction growths with tungsten content from 40 to 80% coincident with decrease of activation energy from 0,1 to 0,06 eV

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