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MODELING OF PROCESSES AND MATERIALS
ArticleName Modeling an influence of internal mechanical stresses on the rate of growth of oxygen precipitates in silicon
ArticleAuthor R. V. Goldstein, T. M. Makhviladze, M. E. Sarychev
ArticleAuthorData

A.Yu. Ishlinsky Institute for Problems in Mechanics of the Russian Academy of Sciences

R. V. Goldshteyn

 

Institute of Physics and Technology of the Russian Academy of Sciences

T. M. Makhviladze, M. E. Sarychev
Abstract

In the work an approach to modeling the influence of mechanical stresses generated in a silicon matrix by an oxygen precipitate (SiO2) on the rates of the main processes determining the precipitation kinetics. The time dependences of the sizes of a spherical precipitate and the number of oxygen atoms inside it has been obtained and analyzed with the stress factor taken into account.
keywords Precipitate, mechanical stresses, diffusion, reaction rate
References

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