OAO Giredmet

V. S. Ezhlov, A. G. Milvidskaya, E. V. Molodtsova, G. P. Kolchina

Insitute for Chemical Problems of Microelectronics

M. V. Mezhennyi, V. Ya. Reznik

Investigation on the properties of large [100]−oriented InSb single crystals grown by Czoсhralski method The properties of undoped and heavily Te doped large single crystals of InSb grown by Czochralski method in the [100] direction and intended for use in IR photodetectors of new generation were studied. It was found that the non−uniformity in undoped crystals does not exceed 10—16%. The average dislocation density in this ingots was 7 ⋅ 10¹ cm⁻² and their distribution along the diameter of (100)−oriented wafers was much more uniform than for the (211)−oriented wafers. We also studied the microstructure of heavily Te doped InSb crystals. It was established that the dislocation density in these crystals was below 1 ⋅ 10² cm⁻². Te doping producing the electron concentration higher than 1,5 ⋅ 10¹⁸ cm⁻³ gave rise to the formation of high density of precipitates. The optical transmission of the samples with electron concentration ~6,9 ⋅ 10¹⁷ cm⁻³ was found to de higher 40 % for the wavelength range of 3—5 μm.

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