MODELING OF PROCESSES AND MATERIALS
Название
Investigation of Charge Carriers Space Self–Organization in Strong Electrical Fields
Авторы
V. S. Kuznetsov, P. A. Kuznetsov
Информация об авторах

Yaroslavl State University

V. S. Kuznetsov

P. A. Kuznetsov

Реферат

An analytical solution of an avalanche current in p—i—n−structures is obtained. The impurity level and a generation−recombination phenomena are taken into consideration. P—i—n–structures current−voltage characteristic is derived. The results explain pattern formation and hysteresis under strong electrical field.

Ключевые слова
Avalanche diode, recombination, deep impurities
Библиографический список

1. Grekhov, I. V. Lavinnyy proboy p—n−perekhoda v poluprovodnikakh / I. V. Grekhov Yu. N. Serezhkin. − L. : Energiya, 1980.
2. Gafiychuk, V. V. Mikroplazmy v ideal'no odnorodnykh p—i—n−strukturakh. / V. V. Gafiychuk, B. I. Datsko, B. S. Kerner, V. V. Osipov // FTP. − 1990. − T. 24, № 4. − S. 724.
3. Rodin, P. Tunneling−assisted impact ionization fronts in semiconductors / P. Rodin, U. Ebert, W. Hundsdorfer, I. Grekhov // J. Appl. Phys. − 2002. − V. 92, N 2. − P. 958—964.
4. Kyuregyan, A. C. O mekhanizme proboya p−n perekhodov pri bol'shikh skorostyakh narastaniya obratnogo smeshcheniya / A. C. Kyuregyan // Pis'ma v ZhTF. − 2005. − T. 31, vyp. 24. − S. 11—19.
5. Grekhov, I. V. O modeli mul'tistrimernogo pereklyucheniya vysokovol'tnykh kremnievykh p—n−perekhodov za porogom zinerovskogo proboya / I. V. Grekhov, I. P. Rodin // Pis'ma v ZhTF. − 2007. − T. 33, vyp. 4. − S. 87—94.
6. Shell', E. Samoorganizatsiya v poluprovodnikakh. Neravnovesnye fazovye perekhody v poluprovodnikakh, obuslovlennye generatsionno−rekombinatsionnymi protsessami. / E. Shell' − M. : Mir, 1991. − 464 s.
7. Milns, A. Primesi s glubokimi urovnyami v poluprovodnikakh. / A.Milns. − M. : Mir, 1977. − 124 s.
8. Landau, L. D. Kvantovaya mekhanika. Nerelyativistskaya mekhanika / L. D. Landau, E. M. Lifshits. − M. : Nauka, 1989. − 761 s.
9. Levinshtein, M. Breakdown phenomena in semiconductors and semiconductor devices / M. Levinshtein, J. Kostamovaara, S. Vainshtein. − Singapore : World Scientific Publishing Co. Ptc. Ltd., 2005.
10. Astrov, Yu. A. Tokovye struktury v Si(Zn). / Yu. A. Astrov // FTP. − 1993. − T. 27, № 11/12. S. 1971—1989.
11. Astrov, Yu. A. Issledovanie struktury tokovykh nitey v Si(Zn) / Yu. A. Astrov, S. A. Khoreev // FTP. − 1993.− T. 27, № 11/12. − S. 1024—2029.

Language of full-text
русский
Полный текст статьи

Назад