MODELING OF PROCESSES AND MATERIALS
ArticleName
Investigation of Charge Carriers Space Self–Organization in Strong Electrical Fields
ArticleAuthors
V. S. Kuznetsov, P. A. Kuznetsov
ArticleAuthorsData

Yaroslavl State University

V. S. Kuznetsov

P. A. Kuznetsov

Abstract

An analytical solution of an avalanche current in p—i—n−structures is obtained. The impurity level and a generation−recombination phenomena are taken into consideration. P—i—n–structures current−voltage characteristic is derived. The results explain pattern formation and hysteresis under strong electrical field.

keywords
Avalanche diode, recombination, deep impurities
References

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