National University of Science and Technology MISiS
S. P. Kobeleva
I. M. Anfimov
O. V. Toropova
Kvant Research and Production Company
B. V. Zhalnin
Zaporozhye State Engineering Academy, Ukraine
T. V. Kritskaya
In0,01Ga0,99As/In0,56Ga0,44P /Ge structures for the first tandem of three−tandem A3B5/Ge solar cells were synthesized using MOS hydride epitaxy. The p—n–junction was formed by boron diffusion into gallium doped germanium. Phosphorus and gallium profiles in germanium were measured using SIMS. We show that changes in the phosphine flow do not affect the phosphorus distribution and the p—n–junction depth in the germanium stage.
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