National University of Science and Technology MISiS

O. I. Rabinovich

V. P. Sushkov

In this paper we investigated the effect of reducing the LED quantum efficiency at increasing the current density. Reasons influencing this effect are determined. We show methods to reduce this effect and the positive results of using the silicon substrates in nanoheterostructures for light−emitting diodes.

1. Jhou, Y. D. Nitride−based light emitting diode and photodetector dual function devices with InGaN/GaN multiple quantum well structures / Y. D. Jhou, C. H. Chen, R. W. Chuang, S. J. Chang, Y. K. Su, P. C. Chang,. P. C. Chen, H. Hung, S. M. Wang, C. L. Yu // Solid State Electronics − 2005. − V. 49. − P. 1347—1351.
2. Gao, F. Complexes, clustering, and native−defect−assisted diffusion of aluminum in silicon / F. Gao, E. J. Bylaska, W. J. Weber // Phys. Rev. B. − 2004. − V. 70. − P. 2452081—2452088.
3. Akasaki, I. Nitride semiconductors — impact on the future world / I. Akasaki // J. Cryst. Growth. − 2002. − V. 237–239. − P. 905—911.
4. Pankove, J. I. Photoemission from GaN / J. I. Pankove, H. Schade // Appl. Phys. Lett. − 1974. − V. 25, N 1. − P. 53—55.
5. Zukauskas, A. Quaternary AlInGaN MQWs for Ultraviolet LEDs / A. Zukauskas, M. S. Shur, R. Gaska // MRS Bulletin. – 2001. − V. 10. − P. 764—769.
6. Basic research needs for solid−state lighting. Report of the Basic Energy Sciences Workshop on Solid−State Lighting [Elektronnyy resurs]. Rezhim dostupa: http://www.sc.doe.gov/bes/reports/files/SSL_rpt.pdf
7. Winston, D. W. Physical simulation of optoelectronic semiconductor devices. The thesis for the Doctor of Philosophy degree. / D. W. Winston // Department of Electrical and Computer Engineering of the University of Colorado, 1996.
8. Rabinovich, O. I. Komp'yuternoe modelirovanie InGaN svetodiodov / O. I. Rabinovich, V. P. Sushkov // 5−ya Vseros. konf. «Nitridy galliya, indiya i alyuminiya – struktury i pribory». − SPb. : Politekh. un−t, 2007. − S. 81—82.
9. Rabinovich, O. I. New results of InGaN LED simulation / O. I. Rabinovich, S. G. Nikiforov, V. P. Sushkov // Proc. of SPIE V. 6468, Physics and Simulation of Optoelectronic Devices XV, San Jose, California, USA, 2007. − R. 64680U−1—64680U−10.
10. Tablitsy svoystv materialov i sbornik eksperimental'nykh dannykh [Elektronnyy resurs] / Fiziko−Tekhnicheskiy Institut im. A. F. Ioffe RAN – Rezhim dostupa: http://www.matprop.ru
11. Van de Walle, Ch. G. Small valence−band offsets at GaN/InGaN heterojunctions / Ch. G. Van de Walle, J. Neugebauer // Appl. Phys. Lett. − 1997. − V. 70. − P. 2577—2579.
12. Adyr, F. G. Organometallic vapor phase epitaxial growth of GaN on ZrN/AlN/Si substrates / F. G. Adyr, T. E. Simpsion// Appl. Phys. Lett. − 2008. − V. 93. − R. 023109—023111.
13. Tekhnicheskie dannye i kharakteristiki SID i MKNG / Compound Semiconductors [Elektronnyy resurs] − Rezhim dostupa: http://www.compoundsemiconductor.net/csc/details.php?cat=news&id=19734144