FSUE «S&PE “Pulsar”»

A. V. Lutzau

M. M. Krymko

K. L. Enisherlova
E. M. Temper

I. I. Razguliaev

The capabilities of an XMD−300 diffractometer were explored in three measurement setups, i.e. sliding primary beam, diffracted primary beam, θ–2θ setup for the crystalline perfection investigations of semiconductor heterostructures (SOS, SOI, AlGaN/GaN/Si, ion implanted silicon layers). We show that measurements using these three setups in scattered radiation and at direct validity of Bragg’s diffraction condition allowed receiving diffraction interference patterns simultaneously from the crystal lattice of several layers and interferential picks of maximum intensity for each individual layer.

1. Kuz'min, R. N. Rentgenovskaya optika / R. N. Kuz'min // Sorosovskiy obrazovatel'nyy zhurnal. − 1997. − № 2. − S. 1—7.
2. Enisherlova, K. L. The spatial features Al_xGa_1−xN/GaN heterostructures / K. L. Enisherlova, R. M. Immamov, L. M. Subbotin // Proc. of SPIE. Micro− and nanoelectronics. − 2008. − V. 7025. − P. 702518−8.
3. Vasil'ev, A. G. Issledovanie struktur AlGaN/GaN metodom rentgenovskoy difraktometrii / A. G. Vasil'ev, K. L. Enisherlova, A. V. Lyuttsau, E. M. Temper, T. F. Rusak // Elektron. tekhnika. Poluprovodnikovye pribory. seriya 2. − 2010. − Vyp. 2(225). − S. 13—27.
4. Bouen, D. K. Vysokorazreshayushchaya rentgenovskaya difraktometriya i topografiya / D. K. Bouen, B. K. Tanner. − SPb. : Nauka, 2002. − 270 s.
5. Bublik, V. T. The influence of photoexcitation in situ on a generation of defect structure during ion implantation into Si substrates. / V. T. Bublik, V. N. Mordkovich, K. D. Shcherbachev, D. M. Pazhin // J. Phys. D: Appl. Phys. − 2005. V. 38, N 10A. − P. A126—A131.
6. Pinsker, Z. G. Rentgenovskaya kristallooptika / Z. G. Pinsker. − M. : Nauka, 1982. − 390 s.