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Materialy Elektronnoi Tekhniki

MATERIALS SCIENCE AND TECHNOLOGY. SEMICONDUCTORS
ArticleName
Isotopic Effects in Spectra of Electrically Active Impurities in Silicon−28, 29 and 30 with High Isotopic Enrichment
ArticleAuthors
T. V. Kotereva, A. V. Gusev, V. A. Gavva, E. A. Kozyrev
ArticleAuthorsData

G. G. Devyatykh Institute of Chemistry of High−Purity Substances of the Russian Academy of Sciences, Nizhny Novgorod:

T. V. Kotereva

A. V. Gusev

V. A. Gavva

E. A. Kozyrev

ArticleName
Layering of GeSi solid solution on the GaAs and Si substrates
ArticleAuthors
E. F. Venger, L. A. Matveeva, P. L. Nelyuba
ArticleAuthorsData

V. Lashkarov Institute of Semiconductor Physics, the National Academy of Science of Ukraine:

E. F. Venger

L. A. Matveeva

P. L. Nelyuba

ArticleName
Specific Features of Microinclusion Formation in Multisilicon Crystals Grown from Refined Metallurgical Silicon by the Bridgman–Stockbarger Method
ArticleAuthors
S. M. Pescherova, L. A. Pavlova, A. I. Nepomnyaschikh, I. A. Eliseev and Yu. V. Sokolnikova
ArticleAuthorsData

Federal State Budget Research Organization A.P. Vinogradov Institute of Geochemistry, Siberian Branch, Russian Academy of Sciences:

S. M. Pescherova

L. A. Pavlova

A. I. Nepomnyaschikh

I. A. Eliseev

Yu. V. Sokolnikova

ArticleName
Modeling of Ion Implantation and Rapid Thermal Treatments during the Formation of Active Regions of Submicron and Nanometer Silicon IС
ArticleAuthors
F. F. Komarov, A. F. Komarov, A. M. Mironov, G. M. Zayats, Y. V. Makarevich, S. A. Miskevich
ArticleAuthorsData

A. N. Sevchenko Institute of Applied Physics Problems:

F. F. Komarov

A. F. Komarov

A. M. Mironov

Y. V. Makarevich

S. A. Miskevich

 

Institute of Mathematics, Academy of Sciences of Belarus:

G. M. Zayats

ArticleName
Stress and Adhesion of CVD Grown Polycrystalline 3C–SiC Films on Silicon Substrates
ArticleAuthors
T. M. Tkacheva, L. M. Ivanova, K. D. Demakov, M. N. Shakhov
ArticleAuthorsData

MADI:

T. M. Tkacheva

M. N. Shakhov

 

NRC «Kurchatov Institute:

L. M. Ivanova

K. D. Demakov

EPITAXIAL LAYERS AND MULTILAYERED COMPOSITIONS
ArticleName
Influence of Ge Ion Implantation into Silicon Dioxide/Silicon Structure on Charge Accumulation under Low–Energy Stationary Radiation
ArticleAuthors
O. P. Guskova, V. M. Vorotynthev, E. L. Shobolov, N. D. Abrosimova
ArticleAuthorsData

Federal State –owned Unitary Enterprize «Federal Science and Production Center Measuring Systems Research Institute named after Yu. Ye. Sedakov»:

O. P. Guskova

E. L. Shobolov

N. D. Abrosimova

 

Nizhny Novgorod, State technical University named after R. E. Alekseev:

V. M. Vorotynthev

ArticleName
Investigation of Sheet Resistance Distribution of Ti, Al, Ni, Cr and Au Metal Films on Silicon Substrates
ArticleAuthors
K. D. Vaniukhin, S. P. Kobeleva, Yu. A. Konzcevoy, V. A. Kurmatshev, L. A. Seidman
ArticleAuthorsData

IFYAE NIYAU MIFI:

K. D. Vaniukhin

L. A. Seidman

 

National University of Science and Technology MISiS:

S. P. Kobeleva

 

FGUP NPP Pulsar:

Yu. A. Konzcevoy
V. A. Kurmatshev

ArticleName
Study of Electrical Properties of Schottky Diodes Fabricated on Silicon with Different Metal Layers
ArticleAuthor
I. G. Pashayev
ArticleAuthorData

Baku State University, Azerbaijan Republic:

I. G. Pashayev

ArticleName
Hydrogen–Induced Cleavage of Silicon Wafers by Electrochemical Etching
ArticleAuthors
K. B. Tynyshtykbaev, Yu. A. Ryabikin, S. Zh. Tokmoldin, B. A. Rakhmetov and T. Aitmukan
ArticleAuthorsData

Physical and Technical Institute of the Ministry of Education and Science, Republic of Kazakhstan:

K. B. Tynyshtykbaev

Yu. A. Ryabikin

S. Zh. Tokmoldin
B. A. Rakhmetov

T. Aitmukan

NANOMATERIALS AND NANOTECHNOLOGY
ArticleName
Nanosized Silicon Grown with HCl : HF : C2H5OH Electrolyte
ArticleAuthors
Yu. N. Parkhomenko, A. I. Belogorokhov, A. P. Bliev, V. G. Sozanov
ArticleAuthorsData

OAO Giredmet:

Yu. N. Parkhomenko

A. I. Belogorokhov

 

GOU VPO K.L. Khetagurov SOGU:

A. P. Bliev

V. G. Sozanov

ArticleName
Investigation of formation porous structures in sol−gel systems by silicon oxide and oxides of metals
ArticleAuthors
V. S. Levitskiy, A. S. Lenshin, A. I. Maximov, E. V. Maraeva, V. A. Moshnikov
ArticleAuthorsData

V. I. Ulyanov (Lenin) Saint–Petersburg State Electrotechnical University LETI, Saint–Petersburg:

V. S. Levitskiy

A. I. Maximov
E. V. Maraeva

V. A. Moshnikov

 

Voronezh State University:

A. S. Lenshin

ArticleName
Diffraction Studies of the Formation of Silicon Nanocrystals in the SiOx/Si Compounds after Carbon Ion Implantation
ArticleAuthors
V. A. Terekhov, D. I. Tetelbaum, I. E. Zanin, K. N. Pankov, D. E. Spirin, A. N. Mikhaylov, A. I. Belov, A. V. Ershov
ArticleAuthorsData

Voronezh State University:

V. A. Terekhov

I. E. Zanin

K. N. Pankov

D. E. Spirin

 

Physico–Technical Research Institute at the Lobachevsky State University of Nizhni Novgorod:

D. I. Tetelbaum
A. N. Mikhaylov
A. I. Belov

 

Lobachevsky State University of Nizhni Novgorod:

A. V. Ershov

ArticleName
Gradient Planar Optical Waveguides on the Basis of Fluorinated Silica Glasses Fabricated in Low Pressure Microwave Plasma
ArticleAuthors
I. P. Shilov, L. U. Kochmarev, N. T. Klyuchnik, M. Ya. Yakovlev
ArticleAuthorsData

Fryazino Branch, V.A. Kotelnikov Institute of Radio Engineering and Electronics:

I. P. Shilov

L. U. Kochmarev

 

TsNITI Technomash–WOS Co:

N. T. Klyuchnik

M. Ya. Yakovlev

ArticleName
Features of Chemically Etched Porous Silicon
ArticleAuthor
T. Yu. Bilyk
ArticleAuthorData

National Technical University of Ukraine «Kiev Polytechnical Institute», Ukraine:

Yu. Bilyk