Federal State –owned Unitary Enterprize «Federal Science and Production Center Measuring Systems Research Institute named after Yu. Ye. Sedakov»:

O. P. Guskova

E. L. Shobolov

N. D. Abrosimova

Nizhny Novgorod, State technical University named after R. E. Alekseev:

V. M. Vorotynthev

Results on the influence of Ge ion implantation into pyrogenic SiO₂ on radiation charge accumulation are presented. Ge embedding in the silicon dioxide/ silicon system has been analyzed theoretically. We show that Ge ion embedding in the stoichiometric silicon dioxide at the silicon dioxide / silicon interface or forming Ge nanoclusters in the SiO₂ bulk provide an energetic advantage.

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