Materialy Elektronnoi Tekhniki
National Research Nuclear University MEPhI
N. I. Kargin
A. O. Sultanov
Belarusian State University of Informatics and Radioelectronics:
A. V. Bondarenko
V. P. Bondarenko
S. V. Redko
OJSC «OKB−Planeta»:
A. S. Ionov
Institute for Physics of Microstructures RAS:
M. N. Drozdov
M. V. Stepikhova
Samara State University
N. V. Latuchina
V. A. Pokoeva
M. A. Surin
JSC Giredmet:
V. S. Ezhlov
A. G. Milvidskaya
E. V. Molodtsova
JSC Optron:
M. V. Mezhennyi
Joint Stock Company «Giredmet»
A. G. Belov
M. B. Shadov
National Research University
V. A. Golubiatnikov
F. I. Grigor’ev
A. P. Lysenko
N. I. Strogankova
National University of Science and Technology MISIS:
V. G. Kostishyn
A. V. Nuriev
V. Stefanik Karpaty National University:
B. K Ostafiychuk
G. V. Kurdyumov Institute of Physics of Metals, National Academy of Sciences, Ukraine:
V. V. Moklyak
National Center for Physics of Particles and High Energies, Belarus State University, Republic of Belarus:
Yu. A. Fedotova
Belarus State University, Republic of Belarus:
D. K. Ivanov
Yu. A. Ivanova
A. V. Mazanik
I. A. Svito
E. A. Streltsov
A. K. Fedotov
Al−Balqa Applied University, Jordan:
A. Saad
Joint Institute for Nuclear Research:
S. I. Tyutyunnikov
P. Yu. Apel
A. A. Galkin Donetsk Institute for Physics and Engineering, National Academy of Sciences, Donetsk, Ukraine:
V. V. Rumyantsev
S. A. Fedorov
National University of Scienceand Technology MISIS:
V. N. Murashev
S. A. Legotin
A. A. Krasnov
KVANT Research and Production Enterprise:
A. A. Dudkin
National Research University Moscow Energy Institute:
D. A. Zezin
Zaporizhstal Integrated Iron & Steel Works JSC, Ukraine:
S. V. Bytkin
Zaporozhye State Engineering Academy, Ukraine:
T. V. Kritskaya
National University of Science and Technology MISIS:
S. P. Kobeleva
Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia Effects of the Formation Method of Early GaP:
I. D. Loshkarev
A. P. Vasilenko
E. M. Trukhanov
A. V. Kolesnikov
A. S. Ilin
M. A. Putyato
B. R. Semyagyn
V. V. Preobrazhensky
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine:
V. A. Dan’ko
S. O. Zlobin
I. Z. Indutnyi
I. P. Lisovskyy
V. G. Litovchenko
K. V. Michailovska
P. E. Shepeliavyi
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Physikalisches Institut, Goethe−Universitaet, Frankfurt am Main, Germany
E. V. Begun
National University of Science and Technology MISIS Charge Relaxation Based Integral–Differential:
F. I. Manyakhin
National Research University Higher School of Economics:
V. A. Golubiatnikov
F. I. Grigor’ev
A. P. Lysenko
N. I. Strogankova
M. B. Shadov
Joint Stock Company «Giredmet»:
A. G. Belov
V. E. Kanevsky