Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia Effects of the Formation Method of Early GaP:

I. D. Loshkarev

A. P. Vasilenko

E. M. Trukhanov

A. V. Kolesnikov

A. S. Ilin

M. A. Putyato

B. R. Semyagyn
V. V. Preobrazhensky

A significant dependence of the strain state of GaAs film lattice grown by molecular−beam epitaxy (MBE) on the nucleation method of early GaP buffer layers (50 nm) on the vicinal substrate Si(001) 4° around the <011> axis was discovered. GaP growth started layer−by−layer with a gallium or a phosphorus sublayer. If GaP nucleated with a gallium sublayer, the GaAs film has a significant lattice rotation around the <011> axis. If the buffer starts forming with a phosphorus layer the GaAs film evidently rotates around the <001> axis. The film relaxation degree exceeds 100%, and the film is in a laterally strained state. Analysis was carried out using the triclinic distortion model. A reciprocal space scattering map was obtained using X−ray diffraction in a three−axis low resolution setup. The map clearly shows that the GaAs film lattice is rotated.

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