National Technical University of Ukraine «Kiev Polytechnical Institute», Ukraine:

Yu. Bilyk

The paper describes a complex study of chemically etched porous silicon layers and the relationship between etching parameters and porous layer properties. We show that the conductivity of porous silicon is similar to that of amorphous silicon. Chemical etching allows creating porous layers with the same intensity of photoluminescence and absorption as for anodically etched porous silicon.

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