Detached structural subdivision «Siberian Physical–Technical Institute of Tomsk State University

A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh

The electro−physical and photoelectrical properties of MIS structures based on HgCdTe MBE with non−uniform distribution of composition were experimentally investigated. It is shown that near−surface graded−gap layers with elevated composition strongly affect on dependencies of the capacitance and the photo−emf versus the bias voltage and frequency for the MIS structures based on n−Hg_1−xCd_xTe (x = 0.21—0.23). The characteristics of MIS structures based on n−Hg_0.7Cd_0.3Te with periodically located regions with high composition were investigated and it is shown that these regions are most strongly affect the characteristics of MIS structures when their location near the boundary of the insulator−semiconductor. The electrical properties of MIS structures based on n−Hg_1−xCd_xTe (x = 0.62—0.73) with region with lower composition were experimentally studied.

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