Sigm Plus Co.

A. V. Mazalov, D. R. Sabitov, V. A. Kureshov, A. A. Padalitsa

Sigm Plus Co.,

Moscow State University of Fine Chemical Technologies
A. A. Marmalyuk

Moscow State University of Fine Chemical Technologies

R. Kh. Akchurin

In present work the influence of growth conditions on structural quality of AlN layers grown by МОСVD have been investigated. The influence of buffer layers grown with different temperatures and V/III ratio on crystalline quality of AlN were explored. We have reported that the high temperature buffer layer with low V/III ratio is most efficient way to improve the structural quality of AlN. Further improvement was achieved by minimizing the parasitic reactions between NH₃ and TMAl. It was carried out by optimization the total flow through the reactor. Applying these methods, it was possible to obtain a high−quality AlN layers (FWHM for (0002), (0004) and (1013) reflections were 50, 97 and 202 arc seconds respectively) with good root−mean−square roughness of surface 0.7 nm.

1. Amano, H. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer / H. Amano, N. Sawaki, I. Akasaki, T. Toyoda // Appl. Phys. Lett. − 1986. − V. 48. − P. 353—355.
2. Nakamura, S. GaN growth using GaN buffer layer / S. Nakamura // Jap. J. Appl. Phys. − 1991. − V. 30. − P. L1705—L1707.
3. Paduano, Q. S. Effect of initial process conditions on the structural properties of AlN films / Q. S. Paduano, D. W. Weyburne, J. Jasinski, Z. Liliental−Weber // J. Cryst. Growth. − 2004. − V. 261. − P. 259—265.
4. Thapa, S. B. Structural and spectroscopic properties of AlN layers grown by MOVPE / S. B. Thapa, C. Kirchner, F. Scholz, G. M. Prinz, K. Thonke // Ibid. − 2007. − V. 298. − P. 383—386.
5. Okada, N. Growth of high−quality and crack free AlN layers on sapphire substrate by multi−growth mode modification / N. Okada, N. Kato, S. Sato, T Sumii, T. Nagai, N. Fujimoto // Ibid. − 2007. − V. 298. − P. 349—353.
6. Imura, M. Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio / M. Imura, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya // Ibid.− 2007. − V. 300. − P. 136—140.
7. Lundin, V. V. Epitaksiya sloev AlN s vysokoy skorost'yu rosta v planetarnom MOS−gidridnom reaktore / V. V. Lundin, A. E. Nikolaev, A. V. Sakharov, P. N. Brunkov, E. E. Zavarin, A. F. Tsatsul'nikov // Pis'ma v ZhTF. − 2010.− T. 36, vyp. 24. − C. 33—39.
8. Bouen, D. K. Vysokorazreshayushchaya rentgenovskaya difraktometriya i topografiya / D. K. Bouen, B. K. Tanner. − SPb. : Nauka, 2002. − 274 s.