MATERIALS SCIENCE AND TECHNOLOGY. SEMICONDUCTORS | |
Название | Higher School of Economics The Influence of Illumination upon Electrophysical Parameters of CdTe Sample Contacts |
Автор | A. G. Belov, V. A. Golubiatnikov, F. I. Grigor’ev, A. P. Lysenko, N. I. Strogankova, M. B. Shadov |
Информация об авторе | Joint Stock Company «Giredmet» A. G. Belov M. B. Shadov
National Research University V. A. Golubiatnikov F. I. Grigor’ev N. I. Strogankova |
Реферат | Voltage−current characteristics (VIC′s) were investigated and electric resistivity and Hall coefficient measurements of high−ohmic cadmium telluride samples were made at room temperature. The samples were cut from ingots grown by traveling heater method and doped with chlorine (2 · 1017 cm−3 in load). Indium and gold were used as contact materials. Galvanomagnetic measurements were made at square−form samples using the Van der Pau method in magnetic fields B ≤ 1.5 Tl. The near−contact regions were illuminated by white light of variable intensity; the VIC′s were investigated also. In addition, the VIC′s were investigated when the sample was illuminated by monochromatic 480 nm light through gold−covered sides of the sample. The experiments showed that illumination of the near−contact region leads to a considerable decrease of sample resistance (by 2—3 orders of magnitude). The VIC′s had linear shapes and in most cases came through the origin of coordinates. With an increase in the light intensity the angle between the X−axis and the VIC straight line increased. Similar results were obtained when monochromatic light passed through gold−covered sides of the sample. We show that illumination of the near−contact region allows measuring the electrical resistivity and the Hall coefficient of the sample which is impossible without illumination. |
Ключевые слова | Cadmium telluride, near−contact region illumination, electrical resistivity, Hall coefficient, voltage−current characteristics |
Библиографический список | 1. Jaeger, H. Transition resistances of ohmic contacts to p−type CdTe and their time−dependent variation / H. Jaeger, E. Seipp // J. Electron. Mater. − 1981. − V. 10, N 3. − P. 605—618. |
Language of full-text | русский |
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