Журналы →  Materialy Elektronnoi Tekhniki →  2013 →  №4 →  Назад

EPITAXIAL LAYERS AND MULTILAYERED COMPOSITIONS
Название Degradation of Three–Junction Amorphous Si : H Based Solar Cells
Автор V. N. Murashev, S. A. Legotin, A. A. Krasnov, A. A. Dudkin, D. A. Zezin
Информация об авторе

National University of Scienceand Technology MISIS:

V. N. Murashev

S. A. Legotin

A. A. Krasnov

 

KVANT Research and Production Enterprise:

A. A. Dudkin

 

National Research University Moscow Energy Institute:

D. A. Zezin

Реферат

The operating experience of hydrogenated amorphous silicon (a−Si : H) based solar cells has shown that besides their low efficiency this type of photovoltaics degrade much faster compared to single crystal based solar cells. As far as the processes determining the degradation of amorphous materials based solar cells are not well studied, and the degradation of similar cells without light exposure has also been reported, we conducted an experiment to compare the temporal change characteristics of main solar cell parameters in darkness and under natural light. The demonstration of short circuit current reduction in darkness aged solar cells should be considered as one of the most interesting results of the work. Moreover we have shown that the change of this parameter is on average the same for the illuminated cells, while for some cells short circuit current reduction is substantially higher. This is indicative of the fact that the observed effect is not related to the Staebler—Wronski effect.

Ключевые слова Solar cell degradation, thin film solar cells, hydrogenated amorphous silicon, a−Si:H, dispersion curves, Staebler–Wronski effect
Библиографический список

1. Catrene scientific committee eorking group: Integrated power & energy efficiency [Elektronnyi document] (http://www.catrene.org/web/downloads/IPEE_Report_by_Catrene%20Sci._Comm.pdf).
2. Weigel, W.−D. Moderne drehstromantriebstechnik — stand und perspektiven / W.−D. Weigel // ZEVrail Glasers Annalen (Tagungsband SFT Graz). − 2002. − P. 112—125.
3. Kaminski, N. Vozdeistvie kosmicheskogo izlucheniya na intensivnost‘ otkazov IGCT [Elektronnyi document] / N. Kaminski, A. Chekmarev, I. Korzina, T. Styasni // Silovaya elektronika. − 2008. − N 1. − P. 30—32 (http://www.power−e.ru/2008_1_30.php).
4. O Federal‘noi celevoi programme «Nacional‘naya tehnologicheskaya baza» na 2007—2011 gody (v red. Postanovleniya Pravitel‘stva RF ot 26.11.2007 N 809). [Elektronnyi document] (http://www.intpark.noolab.ru/uploads/1245030251.doc).
5. Kritskaya, T. V. Upravlenie svoistvami i razrabotka promyshlennoi tehnologii monokristallicheskogo kremniya dlya elektroniki i solnechnoi energetiki: Diss. d−ra. tehn. n. − Zaporozh’e, 2006. − 375 p.
6. Bytkin, S. V. Silicon doped with germanium (n−Si<Ge>) usage for manufacturing of radiation hardened devices and integrated circuits. / S. V. Bytkin // Fourth Europ. Conf. on Radiation and Its Effects on Components and Systems Proceedings. − Cannes (France), 1997. − P. 141—146.
7. Bytkin, S. V. Materialy i processy v tehnologii kremnievyh priborov, ustoichivyh k deistviyu ioniziruyushih izluchenii: analiz effektivnosti primeneniya / S. V. Bytkin, O. V. Bytkina − Zaporozh’e : Izd−vo ZGIA, 1997. − 84 p.
8. Bytkin, S. V. Radiacionnaya stoikost’ planarnyh n—p—n−struktur, izgotovlennyh iz monokristallov kremniya s razlichnoi koncentraciei germaniya / S. V. Bytkin, T. V. Kritskaya // Skladni sistemi i procesi − 2003. − N 2. − P. 90—96.

9. Barabash L. I. Сучасні методи підвищення радіаційної стійкості напівпровідникових матеріалів / L. I. Barabash, I. M. Vishnevs'kii, A. A. Groza, A. Ya. Karpenko, P. G. Litovchenko, M. I. Starchik // Voprosy atomnoi nauki i tehniki. Ser. 90: Fizika radiacionnyh povrezhdenii i radiacionnoe materialovedenie. − 2007. − N 2. − P. 182—189.
10. Defense technology strategy for the demands of the 21st century [Elektronnyi document] (http://www.science.mod.uk/modwww/content/dts_complete.pdf).
11. Borovikov, V. STATISTICA. Iskusstvo analiza dannyh na komp‘yutere. Dlya professionalov / V. Borovikov. − SPb. : Piter, 2003. − 688 p.
12. Kudryavcev, V. M. Mathcad 11: Polnoe rukovodstvo po russkoi versii. / V. M. Kudryavcev − M. : DMK Press, 2005. − 592 p.
13. Gerlah, V. Tiristory / V. Gerlah − M. : Energoatomizdat, 1985. − 345 p.
14. Kritskaya, T. V. Uprugie napryazheniya v kremnii s vnutrennimi getterami / T. V. Kritskaya, V. E. Kustov, N. A. Tripachko, V. I. Shahovcov // Elektronnaya tehnika. Ser. Materialy. − 1989. − Iss. 4 (241). − P. 41—43.
15. Kritskaya, T. V. Osobennosti spektrov IK−poglosheniya termodonorov v kristallah Si : Ge / T. V. Kritskaya, L. I. Hirunenko, V. I. Shahovcov, V. I. Yashnik // FTP. − 1990. − T. 24, Iss. 6. − P. 1129—1132.
16. Kustov, V. E. Vnutrennie uprugie deformacii v kremnii / V. E.Kustov, T. V. Kritskaya, N. A. Tripachko, L. I. Hirunenko, V. I. Shahovcov, V. I. Yashnik // Neorgan. materialy. − 1991. − N 6. − P. 1116—1118.
17. Khirunenko, L. I. Oxygen in silicon doped with isovalent impurities. / L. I. Khirunenko, Yu. V. Pomozov, M. G. Sosnin, V. K. Shinkarenko // Physica B. − 1999. − V. 273−274. − P. 317—321.

Language of full-text русский
Полный текст статьи Получить
Назад