National University of Science and Technology MISIS Charge Relaxation Based Integral–Differential:

F. I. Manyakhin

A new method of measuring the parameters of shallow and medium−depth levels in semiconductor band gaps has been presented. The method is based on temperature scanning, hardware integration and subsequent differentiation by the duration of the relaxation charge excitation pulse of the energy levels during the application of a small amplitude displacement meander to the barrier structure. Experimental results of research AlGaN/InGaN/GaN of the structures are resulted.

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